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NTD4960N - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Three Package Variations for Design Flexibility.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription

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NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  Three Package Variations for Design Flexibility  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  CPU Power Delivery  DC−DC Converters  Recommended for High Side (Control) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS 20 V TA = 25C ID 11.1 A TA = 85C 8.
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