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NSR02F30NXT5G - Schottky Barrier Diode

Features

  • Very Low Forward Voltage Drop.
  • 370 mV @ 10 mA.
  • Low Reverse Current.
  • 7.0 mA @ 10 V VR.
  • 200 mA of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • Very High Switching Speed.
  • Low Capacitance.
  • CT = 7 pF.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Full PDF Text Transcription

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Schottky Barrier Diode NSR02F30NXT5G These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 370 mV @ 10 mA • Low Reverse Current − 7.
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