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NSR0230M2T5G - Schottky Barrier Diode

Datasheet Summary

Features

  • Extremely Fast Switching Speed.
  • Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA.
  • Low Reverse Current.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

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Datasheet preview – NSR0230M2T5G

Datasheet Details

Part number NSR0230M2T5G
Manufacturer ON Semiconductor
File Size 112.52 KB
Description Schottky Barrier Diode
Datasheet download datasheet NSR0230M2T5G Datasheet
Additional preview pages of the NSR0230M2T5G datasheet.

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Full PDF Text Transcription

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NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA  Low Reverse Current  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.
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