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NSR0240V2T1G - Schottky Barrier Diode

Datasheet Summary

Features

  • Very Low Forward Voltage Drop.
  • 480 mV @ 100 mA.
  • Low Reverse Current.
  • 0.2 mA @ 25 V VR.
  • 250 mA of Continuous Forward Current.
  • Power Dissipation of 200 mW with Minimum Trace.
  • Very High Switching Speed.
  • Low Capacitance.
  • CT = 4 pF.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

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Datasheet preview – NSR0240V2T1G

Datasheet Details

Part number NSR0240V2T1G
Manufacturer ON Semiconductor
File Size 109.91 KB
Description Schottky Barrier Diode
Datasheet download datasheet NSR0240V2T1G Datasheet
Additional preview pages of the NSR0240V2T1G datasheet.

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Full PDF Text Transcription

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NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features  Very Low Forward Voltage Drop − 480 mV @ 100 mA  Low Reverse Current − 0.
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