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Surface Mount Schottky Power Rectifier
MBRS130T3G, NRVBS130T3G, NRVBS130N
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.6 Volts Max @ 1.
NRVBS130T3G Datasheet
