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NDF04N62Z, NDD04N62Z
N-Channel Power MOSFET 620 V, 2.0 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage Continuous Drain Current RqJC
VDSS
620
V
ID
4.4
4.1 A
(Note 2)
Continuous Drain Current RqJC, TA = 100°C
ID
2.8
2.6 A
(Note 2)
Pulsed Drain Current, VGS @ 10V
Power Dissipation RqJC (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 4.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDD04N62Z Datasheet
