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NDD04N50Z
N-Channel Power MOSFET 500 V, 2.7 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.4 A ESD (HBM) (JESD22−A114) Peak Diode Recovery
VDSS ID ID
IDM PD VGS EAS
Vesd dv/dt
500 3.0 1.9
12 61 ±30 120
2800 4.5 (Note 1)
V A A
A W V mJ
V V/ns
Continuous Source Current (Body Diode)
IS 3.
NDD04N50Z Datasheet
