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NCV8440 - Protected Power MOSFET

Features

  • Diode Clamp Between Gate and Source.
  • ESD Protection.
  • Human Body Model 5000 V.
  • Active Over.
  • Voltage Gate to Drain Clamp.
  • Scalable to Lower or Higher RDS(on).
  • Internal Series Gate Resistance.
  • These are Pb.
  • Free Devices Benefits.
  • High Energy Capability for Inductive Loads.
  • Low Switching Noise Generation.

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Datasheet preview – NCV8440

Datasheet Details

Part number NCV8440
Manufacturer ON Semiconductor
File Size 223.27 KB
Description Protected Power MOSFET
Datasheet download datasheet NCV8440 Datasheet
Additional preview pages of the NCV8440 datasheet.

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Full PDF Text Transcription

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NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Applications • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.
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