Datasheet Details
| Part number | MJD18002D2 |
|---|---|
| Manufacturer | onsemi |
| File Size | 154.99 KB |
| Description | POWER TRANSISTOR 2 AMPERES |
| Datasheet |
 MJD18002D2 Datasheet
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| Part number | MJD18002D2 |
|---|---|
| Manufacturer | onsemi |
| File Size | 154.99 KB |
| Description | POWER TRANSISTOR 2 AMPERES |
| Datasheet |
MJD18002D2 Datasheet
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www.DataSheet4U.com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no longer a need to guarantee an hFE window.
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