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FDP2D3N10C - N-Channel MOSFET

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A.
  • Extremely Low Reverse Recovery Charge, Qrr.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDS rDS(ON) MAX ID MAX 100 V 2.