FDMC15N06 Datasheet Text
MOSFET
- Power, N-Channel, UltraFET
55 V, 15 A, 90 mW
FDMC15N06
Description These N- Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery- operated products.
Features
- RDS(on) = 75 mW (Typ.) @ VGS = 10 V, ID = 15 A
- 100% Avalanche Tested
- These Device is Pb- Free and RoHS pliant
DATA SHEET .onsemi.
WDFN8 3.3X3.3, 0.65P CASE 511DQ
D5 D6 D7 D8
4G 3S 2S 1S
MARKING DIAGRAM
ZXYKK 15N06
Z = Assembly Plant Code XY = Date Code (Year & Week) KK = Lot Traceability Code 15N06 = Specific Device Code
ORDERING INFORMATION
Device FDMC15N06
Package
WDFN8 (Pb- Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor ponents Industries, LLC, 2011
6
March, 2023
- Rev 3
Publication Order Number: FDMC15N06/D
FDMC15N06...
