FDMA910PZ Datasheet Text
DATA SHEET .onsemi.
MOSFET
- Single, P-Channel, POWERTRENCH)
-20 V, -9.4 A, 20 mW
FDMA910PZ
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance and zener diode protection against ESD. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max rDS(on) = 20 mW at VGS =
- 4.5 V, ID =
- 9.4 A
- Max rDS(on) = 24 mW at VGS =
- 2.5 V, ID =
- 8.6 A
- Max rDS(on) = 34 mW at VGS =
- 1.8 V, ID =
- 7.2 A
- Low Profile
- 0.8 mm Maximum in the New Package MicroFET
2x2 mm
- HBM ESD Protection Level > 2.8 kV Typical (Note 3)
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and is RoHS pliant
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
- Continuous TA = 25°C (Note 1a)...
