FDMA910PZ Datasheet Text
FDMA910PZ Single P-Channel PowerTrench® MOSFET
FDMA910PZ
Single P-Channel PowerTrench® MOSFET
-20 V, -9.4 A, 20 mΩ
June 2014
Features
General Description
- Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
- Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
- Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
- Low Profile
- 0.8 mm maximum in the new package MicroFET 2x2 mm
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It Features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- HBM ESD protection level > 2.8k V typical (Note 3)
- Free from halogenated pounds and antimony oxides
- RoHS pliant
Pin 1 Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
G3
DD S MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings...
