FDMA905P Datasheet Text
DATA SHEET .onsemi.
MOSFET
- Single, P-Channel, POWERTRENCH)
-12 V, -10 A, 16 mW
FDMA905P
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance.
The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max rDS(on) = 16 mW at VGS =
- 4.5 V, ID =
- 10 A
- Max rDS(on) = 21 mW at VGS =
- 2.5 V, ID =
- 8.9 A
- Max rDS(on) = 82 mW at VGS =
- 1.8 V, ID =
- 4.5 A
- Low Profile
- 0.8 mm Maximum in the New Package MicroFET
2x2 mm
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and is RoHS pliant
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current...
