FDMA905P Datasheet | Fairchild Semiconductor

FDMA905P Single P-Channel PowerTrench® MOSFET June 2014 FDMA905P Single P-Channel PowerTrench® MOSFET -12 V, -10 A, 16 mΩ Features General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A - Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A - Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A - Low profile - 0.8 mm maximum - in the new package MicroFET 2X2 mm - Free from halogenated pounds and antimony oxides - RoHS pliant Pin 1 D D G Bottom Drain Contact Drain Source D D G 1 2 3 6 5 4 D D S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted...