FDMA86265P Datasheet Text
DATA SHEET .onsemi.
MOSFET
- P-Channel, POWERTRENCH)
-150 V, -1 A, 1.2 W
VDS
- 150 V rDS(on) MAX 1.2 mW @
- 10 V 1.4 mW @
- 6 V
ID MAX
- 1 A
FDMA86265P
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 1.2 mW at VGS =
- 10 V, ID =
- 1 A
- Max rDS(on) = 1.4 mW at VGS =
- 6 V, ID =
- 0.9 A
- Low Profile
- 0.8 mm Maximum in the New Package MicroFETt
2x2 mm
- Very Low RDS- on Mid Voltage P- channel Silicon Technology
Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as
Load Switch Applications
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications...
