FDMA86265P Datasheet Text
FDMA86265P P-Channel PowerTrench® MOSFET
August 2018
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
- Low Profile
- 0.8 mm maximum in the new package MicroFET
2x2 mm
- Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
- This product is optimised for fast switching applications as well as load switch applications
- 100% UIL tested
- RoHS pliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications
- Active Clamp Switch
- Load Switch
Pin 1 Drain
DD G Source
BBootttotomm DDraraininCCoonnta- ct DD
DD
DD S MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID...
