Datasheet4U Logo Datasheet4U.com

CPH3461 - Power MOSFET

Features

  • On-Resistance RDS(on)1=5Ω (typ).
  • 2.5V Drive.
  • Pb-Free, Halogen Free and RoHS Compliance.
  • ESD Diode - Protected Gate.
  • Low Ciss and High Speed Switching Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage VDSS VGSS VDGS VGDS Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature ID IDP PW10s, duty cycle1% PD When moun.

📥 Download Datasheet

Datasheet preview – CPH3461

Datasheet Details

Part number CPH3461
Manufacturer ON Semiconductor
File Size 448.29 KB
Description Power MOSFET
Datasheet download datasheet CPH3461 Datasheet
Additional preview pages of the CPH3461 datasheet.

📁 Similar Datasheet

  • CPH3403 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3405 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3406 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3407 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3408 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3409 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3410 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3413 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3414 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3417 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
CPH3461 Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel www.onsemi.com Features  On-Resistance RDS(on)1=5Ω (typ)  2.5V Drive  Pb-Free, Halogen Free and RoHS Compliance  ESD Diode - Protected Gate  Low Ciss and High Speed Switching Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage VDSS VGSS VDGS VGDS Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm2  0.8mm) Tj Storage Temperature Tstg Value 250 10 250 10 350 1.4 1.0 150 55 to +150 Unit V V V V mA A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Published: |