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CPH3459 - Power MOSFET

Features

  • On-resistance RDS(on)1=2.8Ω (typ).
  • 4V drive.
  • Halogen free compliance.
  • Input Capacitance Ciss=90pF (typ).
  • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg Value 200.

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Datasheet Details

Part number CPH3459
Manufacturer ON Semiconductor
File Size 479.58 KB
Description Power MOSFET
Datasheet download datasheet CPH3459 Datasheet
Additional preview pages of the CPH3459 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA2301A CPH3459 Power MOSFET 200V, 3.7Ω, 0.5A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)1=2.8Ω (typ)  4V drive  Halogen free compliance  Input Capacitance Ciss=90pF (typ)  Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg Value 200 20 0.5 2 1.0 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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