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BUV27 - NPN Silicon Power Transistor

Features

  • Low Collection Emitter Saturation Voltage.
  • Fast Switching Speed.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – BUV27

Datasheet Details

Part number BUV27
Manufacturer ON Semiconductor
File Size 84.84 KB
Description NPN Silicon Power Transistor
Datasheet download datasheet BUV27 Datasheet
Additional preview pages of the BUV27 datasheet.

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Full PDF Text Transcription

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BUV27 NPN Silicon Power Transistor This device is designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current Total Device Dissipation (TC = 25°C) Derate above 25°C VCEO VCBO VEBO IC ICM IB PD 120 Vdc 240 Vdc 7.0 Vdc 12 Adc 20 Adc 4.0 Adc 70 W 0.56 W/°C Operating and Storage Temperature TJ, Tstg − 65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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