BUV21 - NPN Silicon Power Transistor

Features

High DC Current Gain: hFE min = 20 at IC = 12 A.
Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A.
Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A.
These are Pb.
Free Devices.

ON Semiconductor

Datasheet Details

Part number	BUV21
Manufacturer	ON Semiconductor
File Size	108.83 KB
Description	NPN Silicon Power Transistor
Datasheet	BUV21 Datasheet
Additional preview pages of the BUV21 datasheet.

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Full PDF Text Transcription

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BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.

Published: Mar 23, 2005 |