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BUL147F - POWER TRANSISTOR

Description

The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

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Datasheet Details

Part number BUL147F
Manufacturer ON Semiconductor
File Size 72.99 KB
Description POWER TRANSISTOR
Datasheet download datasheet BUL147F Datasheet
Additional preview pages of the BUL147F datasheet.

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Full PDF Text Transcription

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BUL310FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) 3 1 2 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
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