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BMS4007 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=6mΩ (typ. ).
  • Input capacitance Ciss=9700pF (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 EAS IAV Note :.
  • 1 VDD=48V, L=100μH, IAV=48A (Fig.1).
  • 2.

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Datasheet Details

Part number BMS4007
Manufacturer onsemi
File Size 164.90 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BMS4007 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET 75V, 60A, 7.8mΩ, TO-220ML(LS) http://onsemi.com Features • ON-resistance RDS(on)=6mΩ (typ.) • Input capacitance Ciss=9700pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=48V, L=100μH, IAV=48A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 75 ±20 60 240 2.0 30 150 --55 to +150 299 48 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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