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BMS3003 - P-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=5.0mΩ (typ. ).
  • Input capacitance Ciss=13200pF (typ. ).
  • -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=--36V, L=100μH, IAV=--60A (F.

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Datasheet Details

Part number BMS3003
Manufacturer onsemi
File Size 84.26 KB
Description P-Channel Power MOSFET
Datasheet download datasheet BMS3003 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=5.0mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --78 --312 2.
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