• Part: 2N7002KW
  • Description: N-Channel FET
  • Manufacturer: onsemi
  • Size: 184.70 KB
Download 2N7002KW Datasheet PDF
onsemi
2N7002KW
Features - Low On- Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra- Small Surface Mount Package - These Devices are Pb- Free and are Ro HS pliant - ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- Source Voltage Gate- Source Voltage Maximum Drain Current Continuous TJ = 100°C Pulsed VDSS VGSS ±20 310 m A 195 m A Operating Junction Temperature Range - 55 to °C +150 Storage Temperature Range TSTG - 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Total Device Dissipation Derating above TA = 25°C Thermal Resistance, Junction to...