NC1M120C75HTU - 1200V SiC MOSFET

Features

High blocking voltage with low On-resistance.
High speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Package Drain (1) 1 2 34 Gate (4) Driver Source (3) Power Source (2) Inner circuit.

NC1M120C75HTU 1200V SiC MOSFET by Novus Semiconductors - Datasheet Preview — Datasheet preview – NC1M120C75HTU

Datasheet Details

Part number	NC1M120C75HTU
Manufacturer	Novus Semiconductors
File Size	1.62 MB
Description	1200V SiC MOSFET
Datasheet	NC1M120C75HTU Datasheet
Additional preview pages of the NC1M120C75HTU datasheet.

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NC1M120C75HTU NovuSiC®️ 1200V 75mΩ SiC MOSFET Datasheet VDS ID@25°C RDS(on) = 1200V = 46A = 75mΩ Features • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) Package Drain (1) 1 2 34 Gate (4) Driver Source (3) Power Source (2) Inner circuit Applications Marking • PV Inverters • Charging Piles • Energy storage systems • Industrial power supply • Industrial Motors C1M120C75U C1M120C75U = Specific device YY = Year YYWW WW = Work week XXX = Wafer code XXXA A = Assembly location Maximum Ratings @Tc=25°C (unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage (static) Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction Ran

Published: Jul 23, 2025 |