Datasheet Details
| Part number | 2N5911 |
|---|---|
| Manufacturer | National Semiconductor (now Texas Instruments) |
| File Size | 29.43 KB |
| Description | N-Channel Monolithic Dual JFET |
| Datasheet |
 2N5911 Datasheet
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| Part number | 2N5911 |
|---|---|
| Manufacturer | National Semiconductor (now Texas Instruments) |
| File Size | 29.43 KB |
| Description | N-Channel Monolithic Dual JFET |
| Datasheet |
2N5911 Datasheet
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The 2N5911 thru2N5912 series of N-channel monolithic dual JFETs is designed for wideband, low noise differen- tial amplifiers.
TO-78 Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±25V Gate-Drain or Gate-Source Voltage Gate Current -25V 50 mA Device Dissipation {Each Side), (Derate 3 mW/°C) 367 mW Total Device Dissipation, (Derate 4 mW/°C) 500 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300°C PIN FET 1 S 2 D 3 G 4 Case 5 S 6 D 7 G Electrical Characteristics (25° unless otherwise noted) PARAMETER CONDITIONS IGSS Gate Reverse Current bvqss v GS(off) VGS Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage IG Gate Operating Current IDSS 9fs gfs 9os 9oss Ciss Crss Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance VGS = -15V, V DS =0 lG = - 1uA, V DS =0 VDS = 10V, Iq = 1 nA 150 C vdg = 10V, Dl = 5 mA 12SX vds = 10V, V G s = 0V, (Note 1) f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz vdg = 10V, Iq = 5 mA f = 1 MHz en Equivalent Short-Circuit Input Noise Voltage f = 10 kHz NF Spot Norse Figure Matching Characteristics f - 10 kHz, RG = 100k MIN -25 1 -0.3 7 5000 5000 MAX -100 -250 -5 -4 -100 -100 40 10,000 10,000 100 150 5 1.2 20 1 UNITS PA nA V PA nA mA umho pF nV v'H"z dB PARAMETER CONDITIONS i!G1-lG2 Differential Gate Current VdG = 10V, Id = 5 mA 125 C IDSSI IDSS2 v GS1~ v GS2i Saturation Drain Current Ratio Vds= 10V, Vqs= 0, (Note 1) Differential Gate-Source Voltage ^|VGS1-VGS2 AT Gate-Source Voltage Differential Drift (Measured at End Points, Ta and Tg) VDG • 10V, Dl = 5 mA Ta = 25 C, T B = 125X Ta= -55"C, T B j 25°C Bfs1 9fs2 Transconductance
a Process 93 2N5911, 2N5912 N-Channel Monolithic Dual JFETs General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5911 | Dual N-Channel JFET | Calogic LLC |
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2N5911 | N-CHANNEL JFET | Micross |
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2N5911 | dual n-channel JFET | Siliconix |
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2N5911 | Dual Matched N-Channel JFET | Solitron Devices |
| Part Number | Description |
|---|---|
| 2N5912 | N-Channel Monolithic Dual JFET |
| 2N5902 | N-Channel Monolithic Dual JFET |
| 2N5903 | N-Channel Monolithic Dual JFET |
| 2N5904 | N-Channel Monolithic Dual JFET |
| 2N5905 | N-Channel Monolithic Dual JFET |
| 2N5906 | N-Channel Monolithic Dual JFET |
| 2N5907 | N-Channel Monolithic Dual JFET |
| 2N5908 | N-Channel Monolithic Dual JFET |
| 2N5909 | N-Channel Monolithic Dual JFET |
| 2N5949 | N-Channel JFET |