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2N5909 Datasheet N-Channel Monolithic Dual JFET

Manufacturer: National Semiconductor (now Texas Instruments)

Download the 2N5909 datasheet PDF. This datasheet also includes the 2N5902 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N5902-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The 2N5902 thru 2N5909 N-channel monolithic dual < JFETs is designed for ultra-low leakage Uq 1 pA) differential amplifier applications.

Dual JFETs TO-99 Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 10 mA Device Dissipation (Each Side), Ta = 25°C (Derate 3 mW/°C) 367 mW Total Device Dissipation, Ta = 25°C (Derate 4 mW/°C) 500 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300° C PIN FET 1 S 2 D 3 G 4 Case 5 S 6 D 7 G 8 Sub Electrical Characteristics (25°C unless otherwise noted) PARAMETER CONDITIONS IGSS „ v GS(off) VGS lG Gate Reverse Currem Gale-Source Bfeakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voftage Gate Operating Current VGS = -20V.

V DS = -G = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Forward Transconductance Common-Source Output Conductance Equivalent Short-Circuit Input Noise Voltage Spot Noise Figure Vqs= iov, VGS= o VDG = 10V, Dl = 30juA VDS" 'ov, v G s=o Matching Characteristics f = 1 kHz f = 1 MHz f = 1 kH?

Overview

o0) Process 84 z10 CM oCO 0) z10 CM o 0) z10 CM O(D 0) lO z CM oIO 0) zlO CM o•<f zIO CM oCO 0> zIO CM OCM 0> zIO CM 2N5902-09 N-Channel Monolithic.

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More Datasheets from National Semiconductor (now Texas Instruments)

Part Number Description
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2N5908 N-Channel Monolithic Dual JFET
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