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Naina Semiconductor emiconductor Ltd.
Diode – Diode Module
Features
• • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
70NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 70 110 1800 15
Units A A A kA s
2
M1 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 - to +125 0.