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70N03 N-Channel MOSFET
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
3.80
+5.55 0.15 -0.15
+ 0.150 .5 0 -0.15
+ 0.281 .5 0 -0.1
0.80+0.1 -0.1
0.127 m ax
2.3 4 .60 +0.15
-0.15
0.60+ 0.1 - 0.1
+ 0.252 .6 5 -0.1
1 Gate 2 Drain
3 Source G
D S
■ Features
● VDS (V) = 30V ● ID = 33A (VGS = 10V) ● RDS(ON) < 4.3mΩ (VGS = 10V) ● RDS(ON) < 6.5mΩ (VGS = 4.5V)
T
+9.70 0.2 -0.2
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
Ta=25℃ Tc=70℃
Tc=25℃ Ta=70℃ t ≤ 10 sec Steady State
Note.