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PZ1418B30U - NPN microwave power transistors

Description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Fig.1 Simplified outline and symbol.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and easy broadband use.

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Other Datasheets by NXP Semiconductors

Part Number Description
PZ1418B15U NPN microwave power transistor
PZ1721B25U NPN microwave power transistors

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and easy broadband use.
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