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PZ1003EK
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
10mΩ @VGS = -10V
ID -50A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2,4 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
-50 ID
-40 IDM -100
Continuous Drain Current
TA = 25 °C TA = 70 °C
-12 ID -9
Avalanche Current
IAS -45
Avalanche Energy
L = 0.1mH
EAS 102
TC = 25 °C
41
Power Dissipation
TC = 100 °C TA = 25 °C
26 PD
2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PZ1003EK Datasheet
