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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors
Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17
Philips Semiconductors
Product specification
7 N-channel 80 mΩ FET array enhancement mode MOS transistors
FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Driving high performance three phase brushless DC motors. DESCRIPTION Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PHN708 Datasheet
