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PHN70308 - N-channel enhancement mode TrenchMOS transistor array

Description

This product is used to drive high performance, three phase brushless d.c.

motors in computer disk drives.

The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic package.

Features

  • 30 mΩ isolation transistor.
  • 80 mΩ spindle transistors.
  • TrenchMOS technology.
  • Logic level compatible.
  • Surface mount package D4 PHN70308 SYMBOL isolation FET S4 G4 QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array FEATURES • 30 mΩ isolation transistor • 80 mΩ spindle transistors • TrenchMOS technology • Logic level compatible • Surface mount package D4 PHN70308 SYMBOL isolation FET S4 G4 QUICK REFERENCE DATA VDS = 25 V ID = 5 A RDS(ON) ≤ 30 mΩ G6 G5 S6 D2 S5 D3 G7 S7 D1 (VGS = 10 V; isolation FET) RDS(ON) ≤ 80 mΩ (VGS = 10 V; spindle FETs) G1 S1 G2 S2 G3 S3 GENERAL DESCRIPTION This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives. The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic package.
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