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PHB23NQ10T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies

T.V.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD23NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
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