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PHB29N08T
N-channel TrenchMOS standard level FET
Rev. 03 — 13 October 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
High noise immunity due to high gate threshold voltage
Low conduction losses due to low on-state resistance
1.3 Applications
Industrial motor control
1.4 Quick reference data
Table 1.
PHB29N08T Datasheet
