PBSS5320T
FEATURES
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability
- High collector current gain
- Improved efficiency due to reduced heat generation.
APPLICATIONS
- Power management applications
- Low and medium power DC/DC convertors
- Supply line switching
- Battery chargers
- Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package. NPN plement: PBSS4320T.
MARKING
TYPE NUMBER PBSS5320T
MARKING CODE(1) ZH∗
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICRP collector-emitter voltage collector...
