Download PBSS5320D Datasheet PDF
NXP Semiconductors
PBSS5320D
FEATURES - Low collector-emitter saturation voltage - High current capability - Improved device reliability due to reduced heat generation APPLICATIONS - Supply line switching circuits - Battery management applications - DC/DC converter applications - Strobe flash units - Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS5320D 52 MARKING CODE 6 5 4 QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 20 - 3 - 5 133 UNIT V A A mΩ 1, 2, 5, 6 3 4 Top view MAM466 Fig.1 Simplified outline (SOT457; SC-74) and symbol. 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum...