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PBSS4160U - 1A NPN transistor

General Description

NPN low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package.

PNP complement: PBSS5160U.

Key Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost-effective replacement of medium power transistors BCP55 and BCX55. 1.3.

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Full PDF Text Transcription for PBSS4160U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS4160U. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 23 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN low VC...

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ective data sheet 1. Product profile 1.1 General description NPN low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package. PNP complement: PBSS5160U. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost-effective replacement of medium power transistors BCP55 and BCX55. 1.3 Applications s Major application segments x Automotive x Telecom infrastructure x Industrial. s Power management x DC-to-DC conversion x Supply line switching. s Peripheral driver x Inductiv

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