PBSS4112PAN
description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP plement: PBSS4112PANP. PNP/PNP plement: PBSS5112PAP.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified 1.3 Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans) 1.4 Quick reference data
Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 500 m A; IB = 50 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 240 mΩ collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms open base 120 1 1.5 V A A Quick...
