PBSS4140T
FEATURES
- Low collector-emitter saturation voltage
- High current capabilities.
- Improved device reliability due to reduced heat generation.
APPLICATIONS
- General purpose switching and muting
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
QUICK REFERENCE DATA
SYMBOL
VCEO ICM RCEsat
PARAMETER collector-emitter voltage peak collector current equivalent on-resistance
MAX. UNIT 40 V 2A <500 mΩ
PINNING
PIN 1 2 3 base emitter collector
DESCRIPTION
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP plement: PBSS5140T. handbook, halfpage
MARKING
TYPE NUMBER PBSS4140T
MARKING CODE(1) ZT-
Note
1.
- = p: made in Hong Kong.
- = t: made in Malaysia.
- = W: made in China.
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
NAME
- PACKAGE DESCRIPTION plastic surface mounted package; 3...
