NX3020NAKV
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3. Applications
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Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 m A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 200 Unit V V m A
Static characteristics (per transistor) drain-source on-state resistance
[1]
- 2.7
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
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