NX3020NAKT
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3. Applications
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Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20
- Typ
- Max 30 20 180
Unit V V m A
Static characteristics drain-source on-state resistance
[1]
- 2.7
Ω
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NXP Semiconductors
30 V, 180 m A N-channel Trench MOSFET
5. Pinning...
