BUK9609-55A - (BUK9x09-55A) TrenchMOS logic level FET
NXP Semiconductors
Download the BUK9609-55A datasheet PDF.
This datasheet also covers the BUK9509-55A variant, as both devices belong to the same (buk9x09-55a) trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK).
2.
Key Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.
Note: The manufacturer provides a single datasheet file (BUK9509-55A_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK9609-55A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9609-55A. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transist...
View more extracted text
a 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4.
BUK9609-55A Datasheet
