BUK9607-30B - (BUK9x07-30B) TrenchMOS logic level FET
NXP Semiconductors
Download the BUK9607-30B datasheet PDF.
This datasheet also covers the BUK9507-30B variant, as both devices belong to the same (buk9x07-30b) trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK).
Key Features
s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.
Note: The manufacturer provides a single datasheet file (BUK9507-30B_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK9607-30B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9607-30B. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effec...
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. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 327 mJ s ID ≤ 75 A s RDSon = 5.9 mΩ (typ) s Ptot ≤ 157 W. 2.
BUK9607-30B Datasheet
