Datasheet4U Logo Datasheet4U.com

BUK9575-100A - TrenchMOS transistor Logic level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9575-55A N-Channel MOSFET NXP Semiconductors
BUK9506-40B N-Channel MOSFET NXP Semiconductors
BUK9506-55A TrenchMOS logic level FET NXP Semiconductors
BUK9506-75B N-channel TrenchMOS logic level FET NXP Semiconductors
BUK9508-55A transistor Logic level FET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BUK9575-55 TrenchMOS transistor Logic level FET
BUK9504-40A (BUK9x04-40A) TrenchMOS logic level FET
BUK9505-30A TrenchMOS transistor Logic level FET
BUK9506-30 TrenchMOS transistor Logic level FET
BUK9506-55A TrenchMOS transistor Logic level FET

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9575-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 19.
Published: |