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BUK856-800A - Insulated Gate Bipolar Transistor IGBT

Description

Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.

The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications.

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Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX. 800 24 125 3.5 1.
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