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BUK856-400IZ - Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

Description

Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications.

The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.

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Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK856-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT 350 400 500 2.
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