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BUK7L11-34ARC - TrenchPLUS standard level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching.

Features

  • s ESD and overvoltage protection s Internal gate resistor s Q101 compliant s On-state resistance 8 mΩ (typ). 1.3.

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Full PDF Text Transcription

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www.DataSheet4U.com BUK7L11-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching. 1.2 Features s ESD and overvoltage protection s Internal gate resistor s Q101 compliant s On-state resistance 8 mΩ (typ). 1.3 Applications s 12 V loads s Motors, lamps and solenoids. 1.4 Quick reference data s VDSR(CL) = 41 V (typ) s ID ≤ 89 A s RDSon = 8 mΩ (typ) s Ptot ≤ 172 W. 2.
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