Datasheet4U Logo Datasheet4U.com

BUK556-60H - PowerMOS transistor Logic level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

The device is intended for use in automotive and general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK555-100A N-Channel MOSFET INCHANGE
BUK555-100B N-Channel MOSFET INCHANGE
BUK118-50DL Monolithic temperature and overload protected logic level power MOSFET NXP Semiconductors
BUK127-50GT PowerMOS transistor Philips
BUK138-50DL Logic level TOPFET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BUK556-60A PowerMOS transistor Logic level FET
BUK552-100A PowerMOS transistor
BUK552-100B PowerMOS transistor
BUK552-60A PowerMOS transistor
BUK552-60B PowerMOS transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive and general purpose switching applications. BUK556-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
Published: |